The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2026
Filed:
Mar. 26, 2024
Samsung Electronics Co., Ltd., Suwon-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
A semiconductor device may include first and second active patterns, first and second gate structures, a source/drain layer, a bit line structure, a contact plug structure, and a capacitor. The first and second active patterns are on a cell region and a peripheral circuit region of a substrate, respectively. The first gate structure extends through an upper portion of the first active pattern. The second gate structure is on an upper surface and an upper sidewall of the second active pattern. The source/drain layer is on a portion of the second active pattern that is adjacent to the second gate structure. The bit line structure is on a central portion of the first active pattern, and overlaps the second gate structure in a horizontal direction. The contact plug structure is on opposing end portions of the first active pattern. The capacitor is on the contact plug structure.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile