The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 20, 2026

Filed:

Jun. 15, 2023
Applicant:

Phosertek Corporation, Hsinchu City, TW;

Inventors:

Yu-Chen Chen, Hsinchu City, TW;

Chien-Hung Lin, Hsinchu City, TW;

Bo-Tsun Chou, Hsinchu City, TW;

Chih-Yuan Weng, Hsinchu City, TW;

Assignee:

Phosertek Corporation, Hsinchu City, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/11 (2021.01); H01S 5/0234 (2021.01); H01S 5/042 (2006.01); H01S 5/20 (2006.01); H01S 5/185 (2021.01);
U.S. Cl.
CPC ...
H01S 5/11 (2021.01); H01S 5/0234 (2021.01); H01S 5/0425 (2013.01); H01S 5/04253 (2019.08); H01S 5/2018 (2013.01); H01S 5/04254 (2019.08); H01S 5/185 (2021.01); H01S 2301/17 (2013.01);
Abstract

A laser device includes a first waveguiding layer, an active layer, a second waveguiding layer, a contact layer, a first insulating layer, a plurality of hole fillings, a first electrode, and a second electrode. The first waveguiding layer, the active layer, the second waveguiding layer, and the contact layer are stacked in sequence to form an epitaxy structure. The epitaxy structure has a first platform, the first platform has multiple holes to form a photonic crystal structure. The first insulating layer is over an upper surface and a sidewall surface of the first platform, wherein the first insulating layer has a first aperture corresponding to the photonic crystal structure. The hole fillings are respectively filled in the holes. The first electrode is over the photonic crystal structure. The second electrode is electrically connected to the first waveguiding layer.


Find Patent Forward Citations

Quick Actions:

Chen, Yu-Chen. (2026). Laser device and method of manufacturing the same (U.S. Patent No. 12771095). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12771095

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…