Complementary ferroelectric logic

Abstract

A new form of logic and processing functionality, complementary ferroelectric logic (CFL), which employs ferroelectric tunnel junction (FTJ) devices as the underlying building blocks, is disclosed. By interconnecting the FTJ devices, one can implement various logical functions and memory devices. Of particular note is that the memory devices retain their written states even when power is removed, i.e., CFL memory is nonvolatile, due to the polarization retention properties of the ferroelectric material in the FTJ devices. Exemplary CFL logic functions include inverter (NOR), NAND, and multi-input comparison circuits. The CFL circuits include a writing pulse step to store either a logic '0' or “1” state, followed by a low voltage read pulse to output the implemented logic function. Due to the CMOS-compatible processes required to fabricate CFL circuits, CFL may be heterogeneously integrated with standard CMOS circuitry.