The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 20, 2026

Filed:

Jun. 05, 2024
Applicant:

SK Hynix Inc., Icheon-si, KR;

Inventors:

Su Jeong Oh, Icheon-si, KR;

Sung Ho Bae, Icheon-si, KR;

Je Bock Chung, Icheon-si, KR;

Beom Seok Hah, Icheon-si, KR;

Assignee:

SK hynix Inc., Icheon-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 3/06 (2006.01);
U.S. Cl.
CPC ...
G06F 3/0652 (2013.01); G06F 3/0604 (2013.01); G06F 3/0679 (2013.01);
Abstract

A memory device includes memory cells and a control unit. The memory cells are coupled in series between one or more first selection transistors coupled in series to a source line and one or more second selection transistors coupled in series to a bit line. The control unit is configured to apply, during a forcing period that is part of a rising period during which an increasing erase voltage is applied to the bit line, an increasing selection voltage to local selection lines coupled to the one or more first selection transistors and the one or more second selection transistors.


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Oh, Su. (2026). Memory device (U.S. Patent No. 12769475). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12769475

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