The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 20, 2026

Filed:

May. 11, 2020
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Yun-Chu Tsai, San Jose, CA (US);

Dong Kil Yim, Pleasanton, CA (US);

Rodney Shunleong Lim, Daly City, CA (US);

Jürgen Grillmayer, Chiayi, TW;

Jung Bae Kim, San Jose, CA (US);

Marcus Bender, Hanau, DE;

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 14/34 (2006.01); C23C 14/08 (2006.01); C23C 14/56 (2006.01); H10P 14/20 (2026.01); H10P 14/22 (2026.01);
U.S. Cl.
CPC ...
C23C 14/3485 (2013.01); C23C 14/083 (2013.01); C23C 14/086 (2013.01); C23C 14/3464 (2013.01); C23C 14/562 (2013.01); H10P 14/22 (2026.01); H10P 14/3434 (2026.01);
Abstract

A method () of depositing layers of a thin-film transistor on a substrate using a sputter deposition source comprising at least one first pair of electrodes and at least one second pair of electrodes, the method comprising moving () the substrate to a first vacuum chamber; depositing () a first layer of the layers on the substrate by supplying the at least one first pair of electrodes with bipolar pulsed DC voltage, wherein a first material of the first layer comprises a first metal oxide; moving () the substrate from the first vacuum chamber to a second vacuum chamber without a vacuum break; and depositing () a second layer of the layers on the first layer by supplying the at least one second pair of electrodes with bipolar pulsed DC voltage, wherein a second material of the second layer comprises a second metal oxide, the second material being different from the first material.


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Tsai, Yun-Chu. (2026). Method of depositing layers of a thin-film transistor on a substrate and sputter deposition apparatus (U.S. Patent No. 12768030). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12768030

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