The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 13, 2026

Filed:

Apr. 01, 2023
Applicant:

Icometrue Company Ltd., Zhubei City, TW;

Inventors:

Mou-Shiung Lin, Hsinchu City, TW;

Jin-Yuan Lee, Hsinchu City, TW;

Assignee:

iCometrue Company Ltd., Hsinchu County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10W 90/00 (2026.01); H10W 70/09 (2026.01); H10W 70/60 (2026.01); H10W 70/66 (2026.01);
U.S. Cl.
CPC ...
H10W 90/401 (2026.01); H10W 70/09 (2026.01); H10W 70/60 (2026.01); H10W 70/66 (2026.01); H10W 90/00 (2026.01); H10W 90/701 (2026.01);
Abstract

A chip package includes a first interconnection scheme; a plurality of first metal contacts under and on the first interconnection scheme and at a bottom surface of the chip package; a first semiconductor IC chip over the first interconnection scheme; a first connector over the first interconnection scheme and at a same horizontal level as the first semiconductor IC chip, wherein the first connector comprises a first substrate and a plurality of first through vias vertically extending through the first substrate of the first connector; a first polymer layer over the first interconnection scheme, wherein the first polymer layer has a top surface coplanar with a top surface of the first semiconductor IC chip, a top surface of the first substrate of the first connector and a top surface of each of the plurality of first through vias; and a second interconnection scheme on the top surface of the first polymer layer, the top surface of the first semiconductor IC chip, the top surface of the first connector and the top surface of each of the plurality of first through vias, wherein the second interconnection scheme comprises a plurality of second metal contacts at a top surface of the chip package.


Find Patent Forward Citations

Lin, Mou-Shiung. (2026). 3d chip package based on through-silicon-via interconnection elevator (U.S. Patent No. 12765431). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12765431

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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