The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 13, 2026

Filed:

Dec. 19, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Chulsoon Chang, Seongnam-si, KR;

Seilyn Kwak, Goyang-si, KR;

Haeseok Park, Yongin-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10W 42/00 (2026.01); H10P 54/00 (2026.01); H10W 72/00 (2026.01); H10W 72/30 (2026.01); H10W 72/50 (2026.01); H10W 74/10 (2026.01); H10W 90/00 (2026.01);
U.S. Cl.
CPC ...
H10W 42/121 (2026.01); H10P 54/00 (2026.01); H10W 42/00 (2026.01); H10W 72/30 (2026.01); H10W 72/50 (2026.01); H10W 72/851 (2026.01); H10W 74/117 (2026.01); H10W 72/884 (2026.01); H10W 90/734 (2026.01); H10W 90/754 (2026.01);
Abstract

An integrated circuit device includes a semiconductor substrate having a first device region, a second device region, and a scribe line region therein. The scribe line region, which extends between the first and second device regions, includes a first edge region adjacent the first device region, a second edge region adjacent the second device region and a cutting region extending between the first and second device regions. A lower interlayer insulating layer is provided on the first and second device regions and on the scribe line region. A first multi-level guard ring is provided, which at least partially surrounds the first device region, when viewed from a plan perspective. An insulating structure is provided, which has a recess therein. The recess extends adjacent the first multi-level guard rings and exposes an upper surface of the lower interlayer insulating layer.


Find Patent Forward Citations

Chang, Chulsoon. (2026). Multi-chip integrated circuit devices having recessed regions therein that support high yield dicing (U.S. Patent No. 12765383). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12765383

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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