Integrated circuit device

Abstract

An integrated circuit device may include a source/drain contact insulation layer on a lower structure, a source/drain contact via penetrating through the source/drain contact insulation layer, an interconnect wiring insulation layer on the source/drain contact insulation layer and including an interconnect wiring trench exposing a top surface of the source/drain contact via, a first interconnect wiring layer covering a lower portion of a sidewall of the interconnect wiring trench and including a first precursor, and a second interconnect wiring layer on the first interconnect wiring layer. The second interconnect wiring layer may cover an upper portion of a sidewall of the interconnect wiring trench and may include a second precursor. A crystal grain size of the second precursor may be larger than a crystal grain size of the first precursor.