The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 13, 2026

Filed:

Mar. 28, 2024
Applicant:

Nanya Technology Corporation, New Taipei City, TW;

Inventor:

Jui-Hsiu Jao, New Taipei City, TW;

Assignee:

NANYA TECHNOLOGY CORPORATION, New Taipei City, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10W 20/20 (2026.01); H10W 20/00 (2026.01); H10W 20/49 (2026.01); H10W 72/00 (2026.01); H10W 72/20 (2026.01); H10W 90/00 (2026.01);
U.S. Cl.
CPC ...
H10W 20/20 (2026.01); H10W 20/023 (2026.01); H10W 20/493 (2026.01); H10W 72/07254 (2026.01); H10W 72/244 (2026.01); H10W 72/247 (2026.01); H10W 72/252 (2026.01); H10W 90/724 (2026.01);
Abstract

A semiconductor device structure and a method of manufacturing the same are provided. The semiconductor device structure includes a semiconductor substrate, a fuse structure, and a circuit region. The semiconductor substrate has a first surface and a second surface opposite to the first surface. The fuse structure is at least partially disposed within the semiconductor substrate. The circuit region is electrically connected to the fuse element. The fuse structure includes a first fuse element, a second fuse element, and a fuse medium connecting the first fuse element and the second fuse element. The first fuse element, the second fuse element, and the fuse medium are arranged along a first direction from the first surface toward the second surface of the semiconductor substrate.


Find Patent Forward Citations

Jao, Jui-Hsiu. (2026). Semiconductor device structure including a vertical fuse structure (U.S. Patent No. 12765349). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12765349

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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