The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2026
Filed:
Dec. 10, 2021
Mi2-factory Gmbh, Jena, DE;
Constantin Csato, Stammbach, DE;
Florian Krippendorf, Jena, DE;
MI2-FACTORY GMBH, Jena, DE;
Abstract
A method for producing a pretreated composite substrate, which is used as the basis for further processing into electronic semiconductor components, includes doping a first layer of SiC in a donor substrate by ion implantation using an energy filter; generating a predetermined breaking point in the donor substrate; and producing a bonded connection between donor substrate and acceptor substrate, the first layer being arranged in a region between the acceptor substrate and a remaining part of the donor substrate. Lastly, the donor substrate is split in the region of the predetermined breaking point to generate the pretreated composite substrate. The pretreated composite substrate has the acceptor substrate and a doped layer, which is connected to the acceptor substrate and includes at least a portion of the first layer of the donor substrate.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile