The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 13, 2026

Filed:

Mar. 08, 2021
Applicants:

National University Corporation Tokai National Higher Education and Research System, Nagoya, JP;

Osaka University, Suita, JP;

Nichia Corporation, Anan, JP;

Inventors:

Tsukasa Torimoto, Nagoya, JP;

Tatsuya Kameyama, Nagoya, JP;

Susumu Kuwabata, Suita, JP;

Taro Uematsu, Suita, JP;

Daisuke Oyamatsu, Tokushima, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C09K 11/58 (2006.01); B82Y 30/00 (2011.01); B82Y 40/00 (2011.01); C09K 11/08 (2006.01); C09K 11/56 (2006.01); C09K 11/62 (2006.01); C09K 11/64 (2006.01); C09K 11/88 (2006.01); H10H 20/851 (2025.01); H10K 50/115 (2023.01);
U.S. Cl.
CPC ...
H10K 50/115 (2023.02); B82Y 30/00 (2013.01); B82Y 40/00 (2013.01); C09K 11/56 (2013.01); C09K 11/62 (2013.01); C09K 11/64 (2013.01); C09K 11/88 (2013.01); H10H 20/8512 (2025.01);
Abstract

Provided is a luminescent material having excellent durability. The luminescent material contains second semiconductor nanoparticles that contain first semiconductor nanoparticles and a deposit arranged on surfaces of the first semiconductor nanoparticles, and that emit light when irradiated with light; and a metal compound in which the second semiconductor nanoparticles are embedded. The first semiconductor nanoparticles contain M, M, and Z. Mis at least one selected from the group consisting of Ag, Cu, Au and alkali metals, and contains at least Ag. Mis at least one selected from the group consisting of Al, Ga, In and Tl, and contains at least one of In and Ga. Z contains at least one selected from the group consisting of S, Se, and Te. The deposit is substantially composed of at least one selected from the group consisting of Al, Ga, In, Tl and alkali metals, and at least one selected from the group consisting of S, O, Se, and Te. The metal compound contains at least one of Zn and Ga, and at least one of S and O.


Find Patent Forward Citations

Torimoto, Tsukasa. (2026). Light emitting material and method for manufacturing same (U.S. Patent No. 12765159). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12765159

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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