The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2026
Filed:
Dec. 15, 2023
Commissariat À L'énergie Atomique ET Aux Énergies Alternatives, Paris, FR;
Stéphane Altazin, Grenoble, FR;
Paolo De Martino, Grenoble, FR;
Nicolas Michit, Grenoble, FR;
Carole Pernel, Grenoble, FR;
Julia Simon, Grenoble, FR;
François Levy, Grenoble, FR;
Bernard Aventurier, Grenoble, FR;
Abstract
A method for manufacturing micro-LEDs may include: (i) providing a stack including at least one strongly n-doped GaN layer, an n-doped GaN layer, quantum wells, and a p-doped GaN layer; (ii) porosifying the GaN layer, to obtain a porosified GaN layer; (iii) forming mesas in the stack; (iv) covering the porosified GaN layer with a second electrode or with an encapsulation layer, the second electrode or the encapsulation layer being in direct contact with the porosified GaN layer. The porosifying (ii) may be carried out so that the optical index of the porosified GaN layer does not vary by more than 10% with respect to the optical index of the second electrode and/or with respect to the optical index of the encapsulation layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile