The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 13, 2026

Filed:

Oct. 26, 2023
Applicant:

Taiwan-asia Semiconductor Corporation, Hsinchu City, TW;

Inventor:

Chun-Chieh Lin, Hsinchu City, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0216 (2014.01); H10F 71/00 (2025.01); H10F 77/30 (2025.01); A61B 5/1455 (2006.01);
U.S. Cl.
CPC ...
H10F 77/306 (2025.01); H10F 71/00 (2025.01); A61B 5/14551 (2013.01);
Abstract

A manufacturing method of a photodiode structure includes the following steps: providing a substrate; performing an epitaxial process to form a first semiconductor layer on the substrate; performing an active area patterning and etching process to form a recessed portion on the first semiconductor layer; performing a first coating process to form a first anti-reflection layer on the first semiconductor layer; and performing an ion implantation process to pass through the first anti-reflection layer and form a second semiconductor layer in the recessed portion.


Find Patent Forward Citations

Lin, Chun-Chieh. (2026). Photodiode structure and manufacturing method thereof (U.S. Patent No. 12765112). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12765112

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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