Solid-state imaging device and method of manufacturing solid-state imaging device

Abstract

A solid-state imaging device includes a first semiconductor layer, a second semiconductor layer, and an external terminal. The first semiconductor layer has a pixel region in which a plurality of pixels is arranged, and a peripheral region provided around the pixel region. The second semiconductor layer is stacked on the first semiconductor layer, and is provided with a pixel circuit coupled to the pixels. The external terminal is provided in an opening that communicates with the second semiconductor layer from the peripheral region in the first semiconductor layer. A first isolator is provided in the first semiconductor layer within the peripheral region, and surrounds at least a portion of an outer periphery of the opening. A second isolator is provided in the second semiconductor layer within a region corresponding to the peripheral region, and surrounds at least a portion of the outer periphery of the opening.