The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 13, 2026

Filed:

Jun. 28, 2023
Applicant:

Stmicroelectronics (Crolles 2) Sas, Crolles, FR;

Inventors:

Alexandre Villaret, Eybens, FR;

Olivier Weber, Grenoble, FR;

Franck Arnaud, St Nazaire les Eymes, FR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 87/00 (2026.01); H10D 30/63 (2025.01); H10D 86/01 (2026.01);
U.S. Cl.
CPC ...
H10D 87/00 (2025.01); H10D 30/637 (2025.01); H10D 86/01 (2025.01);
Abstract

A method can be used for manufacturing a high-voltage transistor in and on a high-voltage region of a silicon-on-insulator type bulk that includes a semiconductor film having a first thickness, electrically insulated from a carrier bulk by a buried dielectric layer. The semiconductor film in the high-voltage region is selectively epitaxially grown to a second thickness that is greater than the first thickness while the semiconductor film remains at the first thickness in a region outside the high-voltage region.


Find Patent Forward Citations

Villaret, Alexandre. (2026). Method for manufacturing high-voltage transistors on a silicon-on-insulator type bulk (U.S. Patent No. 12765067). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12765067

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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