The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2026
Filed:
Dec. 01, 2021
Mitsubishi Electric Corporation, Tokyo, JP;
Hiroyuki Okazaki, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
An object of the technique disclosed in the Description is to provide a semiconductor device that reduces a gate leakage current without degrading its high-frequency characteristic. A semiconductor device relating to the technique disclosed in the Description includes a nitride semiconductor layer, a first insulating film partly disposed on the upper surface of the nitride semiconductor layer, and a gate electrode provided to have a lower surface that is at least partly in contact with the upper surface of the nitride semiconductor layer that is exposed without being covered with the first insulating film. The first insulating film is provided to be in contact with a side surface of the gate electrode. The first insulating film contains a transition metal.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile