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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12765003 B1

PDFFull Text
Date of Patent:
Oct. 13, 2026

Filed:

Feb. 12, 2024

Semiconductor device

Applicant:

Magnolia White Corporation, Tokyo, JP;

Inventors:

Takeshi Sakai, Tokyo, JP;

Yuichiro Hanyu, Tokyo, JP;

Masahiro Watabe, Tokyo, JP;

Assignee:

Magnolia White Corporation, Tokyo, JP;

Attorney:

Maier & Maier, PLLC

Primary Examiner:

David Vu

Int. Cl.
CPC ...
H10D 30/67 (2025.01); H10D 86/01 (2025.01); H10D 86/40 (2025.01); H10D 86/60 (2025.01); H10P 14/692 (2026.01); H10P 32/10 (2026.01); H10P 32/12 (2026.01); H10P 32/14 (2026.01); H10P 34/42 (2026.01); G02F 1/1343 (2006.01); G02F 1/1368 (2006.01); H10K 59/121 (2023.01);
U.S. Cl.
CPC ...
H10D 30/6757 (2025.01); H10D 30/673 (2025.01); H10D 30/6755 (2025.01); H10D 86/0212 (2025.01); H10D 86/0221 (2025.01); H10D 86/423 (2025.01); H10D 86/441 (2025.01); H10D 86/60 (2025.01); H10P 14/69215 (2026.01); H10P 32/12 (2026.01); H10P 32/14 (2026.01); H10P 32/17 (2026.01); H10P 34/42 (2026.01); G02F 1/134363 (2013.01); G02F 1/1368 (2013.01); G02F 1/13685 (2021.01); H10K 59/1213 (2023.02);
Abstract

The purpose of the invention is to form the TFT of the oxide semiconductor, in which influence of variation in mask alignment is suppressed, thus, manufacturing a display device having a TFT of stable characteristics. The concrete measure is as follows. A display device including plural pixels, each of the plural pixels having a thin film transistor (TFT) of an oxide semiconductor comprising: a width of the oxide semiconductor in the channel width direction is wider than a width of the gate electrode in the channel width direction.

Find Patent Forward Citations

Sakai, Takeshi. (2026). Semiconductor device (U.S. Patent No. 12765003). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12765003

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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