The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2026
Filed:
May. 03, 2024
Mitsubishi Electric Corporation, Tokyo, JP;
Yuichi Nagahisa, Tokyo, JP;
Kohei Adachi, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
A semiconductor device includes: a body region disposed between a drift layer and each of a source region and a contact region, having a lower second conductivity type impurity concentration than the contact region, and having a second conductivity type; and a channel layer disposed on a portion of an inner surface of a trench corresponding at least to the contact region and having fewer crystal defects than the contact region, the trench extending through the source region, the contact region, and the body region to the drift layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile