The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2026
Filed:
Apr. 30, 2024
Applicant:
Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Inventor:
Messaoud Bedjaoui, Grenoble Cedex, FR;
Assignee:
Primary Examiner:
Int. Cl.
CPC ...
H10D 1/00 (2025.01); H10D 1/68 (2025.01);
U.S. Cl.
CPC ...
H10D 1/043 (2025.01); H10D 1/042 (2025.01); H10D 1/716 (2025.01);
Abstract
The invention relates, firstly, to a method for patterning a functional layer (), comprising at least the following steps of: Subsequently, the invention relates to a method for preparing a MIM capacitor, implementing the patterning method for patterning at least one layer of the capacitor. Applications: micro- and nano-electronic devices such as electronic chips, manufacturing of high-density MIM capacitors.
Bedjaoui, Messaoud. (2026). Patterning a functional layer by means of a sacrificial layer and preparing a mim capacitor implementing said patterning (U.S. Patent No. 12764978). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12764978
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile