The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 13, 2026

Filed:

Sep. 13, 2022
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventor:

Hidekazu Hayashi, Yokkaichi, JP;

Assignee:

Kioxia Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 43/40 (2023.01); H10B 41/27 (2023.01); H10B 43/27 (2023.01);
U.S. Cl.
CPC ...
H10B 41/27 (2023.02); H10B 43/27 (2023.02);
Abstract

In one embodiment, a method of manufacturing a semiconductor device includes forming a first film on a first substrate, forming a porous layer in a first portion of the first film and a non-porous layer in a second portion of the first film, forming a second film including a first device on the first film, forming a third film including a second device on a second substrate, and bonding the second film on the first substrate and the third film on the second substrate to be opposite to each other. Furthermore, the semiconductor device includes a first region and a second region. Moreover, the first device and the second device are located in the first region, the first portion is located among the first region and the second region, and the second portion is located in the second region.


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Hayashi, Hidekazu. (2026). Semiconductor device and method of manufacturing the same (U.S. Patent No. 12764948). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12764948

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