The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2026
Filed:
Mar. 29, 2024
Samsung Electronics Co., Ltd., Suwon-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
An example semiconductor device includes a bit line structure and a bit line capping pattern that are stacked on a memory cell array region. The device further includes a peripheral gate structure including a peripheral gate dielectric layer, a peripheral gate electrode, and a peripheral gate capping pattern that are stacked on a peripheral circuit region. The device further includes a gate spacer on a side surface of the peripheral gate structure, a first peripheral interlayer insulating layer covering the peripheral gate structure and the gate spacer, and a first peripheral contact plug penetrating through the first peripheral interlayer insulating layer. The bit line capping pattern includes a lower bit line capping layer and an upper bit line capping layer that are stacked. A material of the upper bit line capping layer is same as a material of the first peripheral interlayer insulating layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile