The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2026
Filed:
May. 15, 2024
Powerchip Semiconductor Manufacturing Corporation, Hsinchu, TW;
Jih-Chao Chiu, Hsinchu, TW;
Yu-Shan Wu, Hsinchu, TW;
Yuan-Ming Liu, Hsinchu, TW;
Chee-Wee Liu, Taipei City, TW;
Powerchip Semiconductor Manufacturing Corporation, Hsinchu, TW;
Abstract
A semiconductor structure including a substrate, gate layers, channel layers, and gate dielectric layers is provided. The gate layers and the channel layers are stacked on the substrate. The gate layers are separated from each other. Each of the gate layers surrounds the corresponding channel layer. Two adjacent gate layers are located between two adjacent channel layers. The gate dielectric layers are located between the gate layers and the channel layers.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile