Memory device, method of manufacturing memory device, and electronic apparatus including memory device

Abstract

Disclosed are a memory device, a method of manufacturing the same, and an electronic apparatus. The memory device includes: first to fourth connection line layers sequentially disposed in a vertical direction relative to a substrate. The first connection line layer includes a plurality of first conductive lines extending parallel in a first direction. One of the second and third connection line layers includes a plurality of conductive lines extending parallel in a second direction intersecting the first direction. The fourth connection line layer includes a plurality of fourth conductive lines extending parallel in a third direction. A memory cell is provided at an intersection of conductive lines. Each memory cell includes first to third transistors stacked in the vertical direction. A fifth connection line layer is provided above the memory cell, and includes a plurality of fifth conductive lines extending in a fourth direction intersecting the third direction.