Thin-film substrate and energy-sensitive electronic component including same

Abstract

A thin-film substrate includes an AlOsingle crystal base substrate, and a VOfunctional thin film disposed on the base substrate and doped with Ti, wherein, when R1 is a resistance at a temperature of 25° C. and R2 is a resistance at a temperature of 80° C., the functional thin film has an R1/R2 of 10or more, and when a heating process from 25° C. to 80° C. and a cooling process from 80° C. to 25° C. are referred to as one cycle, a variation (V) in hysteresis temperature difference (ΔT) of the functional thin film during 10 cycles may be 1° C. or lower, a variation (V) in phase transition temperature (T) of the functional thin film during 10 cycles may be 1.5° C. or lower, and a variation rate (V) of R1/R2 of the functional thin film during 10 cycles may be 5% or less.