The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 13, 2026

Filed:

Dec. 12, 2023
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Yonghyuk Choi, Suwon-si, KR;

Seungbum Kim, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/08 (2006.01); G11C 16/04 (2006.01); G11C 16/10 (2006.01); G11C 16/16 (2006.01);
U.S. Cl.
CPC ...
G11C 16/102 (2013.01); G11C 16/0433 (2013.01); G11C 16/16 (2013.01); G11C 16/08 (2013.01);
Abstract

A memory device is provided. The memory device includes: memory cells respectively connected with word lines; first ground selection transistors connected with a first ground selection line programmed to have a first threshold voltage; second ground selection transistors connected with a second ground selection line programmed to have a second threshold voltage which differs from the first threshold voltage; and a control circuit configured to: control an erase operation to be performed on each of at least one first ground selection transistor of the first ground selection transistors based on a threshold voltage of each of the at least one first ground selection transistor being greater than a predetermined first criterion; and control a threshold voltage of each of the second ground selection transistors to be compared with a predetermined second criterion based on the erase operation on the at least one first ground selection transistor being completed.


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Choi, Yonghyuk. (2026). Nand flash memory device with a rewrite operation and operating method thereof (U.S. Patent No. 12763146). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12763146

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