Semiconductor device

Abstract

A semiconductor device with a novel structure is provided. A first element layer and a plurality of second element layers each including a temperature sensing circuit, a voltage generation circuit, and memory cells are provided. The plurality of second element layers are stacked over the first element layer. The memory cell includes a transistor in which a semiconductor layer including a channel formation region includes an oxide semiconductor. The transistor includes a back gate. The voltage generation circuit provided in each layer has a function of generating a back gate voltage supplied to the back gate of the transistor included in the memory cell provided in the same layer. The temperature sensing circuit has a function of controlling the back gate voltage in accordance with a sensed temperature. In the second element layers, the back gate voltage supplied to the transistor included in the second element layer provided in an upper layer is higher than the back gate voltage supplied to the transistor included in the second element layer provided in a lower layer.