Semiconductor device and data storage system including the same

Abstract

A semiconductor device includes first structure including first and second memory blocks. The first memory block has a first connection region, a first memory cell array region, and a second connection region. The second memory block has a third connection region, a second memory cell array region, and a fourth connection region. First gate electrodes of the first memory block include first word lines having first word line pads disposed in the second connection region, and a first upper gate line having a first upper gate pad disposed in the first connection region and disposed on the first word lines. Second gate electrodes of the second memory block include second word lines having second word line pads disposed in the third connection region, and a second upper gate line having a second upper gate pad disposed in the fourth connection region and disposed on the second word lines.