Reflective mask blank, reflective mask, method for manufacturing reflective mask, and method for manufacturing semiconductor device

Abstract

Provided are a reflective mask blank, a reflective mask, a method for manufacturing a reflective mask, and a method for manufacturing a semiconductor device, capable of preventing occurrence of electrostatic breakdown in a substrate peripheral edge portion. The reflective mask blank comprises a substrate, a multilayer reflective film on the substrate, a protective film on the multilayer reflective film, and an absorber film on the protective film. The absorber film comprises a buffer layer and an absorption layer formed on the buffer layer. When a distance from a center of the substrate to an outer peripheral end of the protective film is denoted by Lcap, and a distance from the center of the substrate to an outer peripheral end of the buffer layer is denoted by Lbuf, Lcap≤Lbuf is satisfied. There is at least one location where a total film thickness of the protective film and the buffer layer is 4.5 nm or more in a range of 0.5 mm or less from a side surface of the substratetoward the center of the substrate.