The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 13, 2026

Filed:

Feb. 13, 2024
Applicant:

Allegro Microsystems, Llc, Manchester, NH (US);

Inventors:

Salim Dounia, Grenoble, FR;

Andrey Timopheev, Vif, FR;

Nikita Strelkov, Meylan, FR;

Assignee:

Allegro MicroSystems, LLC, Manchester, NH (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01R 33/09 (2006.01); G01R 33/00 (2006.01); H10N 50/10 (2023.01);
U.S. Cl.
CPC ...
G01R 33/093 (2013.01); G01R 33/0017 (2013.01); G01R 33/0052 (2013.01); G01R 33/098 (2013.01); H10N 50/10 (2023.02);
Abstract

Magnetoresistive element () for sensing an external magnetic field, comprising a tunnel barrier layer () sandwiched between a ferromagnetic reference layer () having a pinned reference magnetization (), and a ferromagnetic sense layer () having a sense magnetization (), wherein the reference, tunnel barrier, and sense layers () are stacked perpendicular to a layer plane (P) thereof. The reference magnetization () is oriented substantially perpendicular to the layer plane (P), and the sense magnetization () is oriented substantially parallel to the layer plane (P). At least the sense layer () has an annular cross-section in the layer plane (P), with an inner diameter (D) and an outer diameter (D). The sense magnetization () has a closed flux path configuration that is orientable either in the clockwise or counterclockwise direction. The inner diameter (Dt) is larger than 300 nm, and a difference between the inner and outer diameters (D, D) is greater than 150 nm.


Find Patent Forward Citations

Dounia, Salim. (2026). Magnetoresistive element having an out-of-plane sensitivity axis and having reduced hysteresis and increased working field range (U.S. Patent No. 12761295). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12761295

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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