The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 13, 2026

Filed:

Mar. 17, 2022
Applicant:

Asm Ip Holding B.v., Almere, NL;

Inventors:

Hichem M'saad, Paradise Valley, AZ (US);

Alexandros Demos, Scottsdale, AZ (US);

Xing Lin, Chandler, AZ (US);

Junwei Su, Tempe, AZ (US);

Matthew Goodman, Chandler, AZ (US);

Daw Gen Lim, Tempe, AZ (US);

Shujin Huang, Tempe, AZ (US);

Rutvij Naik, Tempe, AZ (US);

Assignee:

ASM IP Holding B.V., Almere, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 25/16 (2006.01); C23C 14/54 (2006.01); C23C 16/46 (2006.01); C23C 16/52 (2006.01); C30B 23/06 (2006.01); C30B 25/10 (2006.01); C30B 25/12 (2006.01); F27B 17/00 (2006.01); G01J 5/00 (2022.01); H01L 21/66 (2006.01); H05B 1/02 (2006.01); H05B 3/00 (2006.01); H10P 74/00 (2026.01);
U.S. Cl.
CPC ...
C30B 25/16 (2013.01); C23C 14/541 (2013.01); C23C 16/46 (2013.01); C23C 16/52 (2013.01); C30B 23/063 (2013.01); C30B 25/10 (2013.01); C30B 25/12 (2013.01); F27B 17/0025 (2013.01); G01J 5/0007 (2013.01); H05B 1/0233 (2013.01); H05B 3/0047 (2013.01); H10P 74/23 (2026.01);
Abstract

A method of operating a reactor system to provide wafer temperature gradient control is provided. The method includes operating a center temperature sensor, a middle temperature sensor, and an edge temperature sensor to sense a temperature of a center zone of a wafer on a susceptor in reaction chamber of the reactor system, to sense a temperature of a middle zone of the wafer, and to sense a temperature of an edge zone of the wafer. The temperatures of the center, middle, and edge zones of the wafer are processed with a controller to generate control signals based on a predefined temperature gradient for the wafer. First, second, and third sets of heater lamps are operated based on the temperature of the center, middle, and edge zones to heat the center, the middle, and the edge zone of the wafer. Reactor systems are also described.


Find Patent Forward Citations

M'saad, Hichem. (2026). Wafer temperature gradient control to suppress slip formation in high-temperature epitaxial film growth (U.S. Patent No. 12760442). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12760442

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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