The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2026
Filed:
Aug. 29, 2023
Applicant:
Tokuyama Corporation, Yamaguchi, JP;
Inventors:
Tatsuya Hitomi, Yamaguchi, JP;
Yoshiki Seike, Yamaguchi, JP;
Kohsuke Noro, Yamaguchi, JP;
Kohshiro Okimura, Yamaguchi, JP;
Assignee:
TOKUYAMA CORPORATION, Yamaguchi, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C09K 13/04 (2006.01); C09K 13/00 (2006.01); C09K 13/02 (2006.01); H10P 50/64 (2026.01); H10P 50/66 (2026.01); H10P 70/00 (2026.01);
U.S. Cl.
CPC ...
C09K 13/04 (2013.01); C09K 13/00 (2013.01); C09K 13/02 (2013.01); H10P 50/642 (2026.01); H10P 50/644 (2026.01); H10P 50/667 (2026.01); H10P 70/00 (2026.01); H10P 70/15 (2026.01); H10P 70/20 (2026.01);
Abstract
A silicon etching solution including an aqueous alkaline solution containing a hypohalite ion in a range of 0.05 mmol/L or greater and 5 mmol/L or less and having a pH of 12.5 or greater at 24° C.
Hitomi, Tatsuya. (2026). Silicon etching solution and method for producing silicon etching solution, method for treating substrate, and method for producing silicon device (U.S. Patent No. 12760223). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12760223
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile