The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 06, 2026

Filed:

Aug. 03, 2023
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Yeongseon Kim, Suwon-si, KR;

Dohyun Kim, Suwon-si, KR;

Juhyeon Kim, Suwon-si, KR;

Hyoeun Kim, Suwon-si, KR;

Seonkyung Seo, Suwon-si, KR;

Chajea Jo, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10W 90/00 (2026.01); H10W 72/00 (2026.01); H10W 72/90 (2026.01); H10W 74/10 (2026.01); H10W 80/00 (2026.01); H10W 90/20 (2026.01); H10W 90/26 (2026.01);
U.S. Cl.
CPC ...
H10W 90/00 (2026.01); H10W 74/111 (2026.01); H10W 72/019 (2026.01); H10W 72/01951 (2026.01); H10W 72/921 (2026.01); H10W 72/923 (2026.01); H10W 72/932 (2026.01); H10W 80/312 (2026.01); H10W 80/327 (2026.01); H10W 80/334 (2026.01); H10W 80/701 (2026.01); H10W 90/26 (2026.01); H10W 90/297 (2026.01); H10W 90/792 (2026.01); H10W 90/794 (2026.01);
Abstract

A semiconductor package includes a first semiconductor chip including a first semiconductor device, a second semiconductor chip including a second semiconductor device, and a bonding structure between the first and second semiconductor chips, the bonding structure including a first bonding pad, a first bonding insulating layer, a second bonding pad in contact with the first bonding pad, and a second bonding insulating layer in contact with the first bonding insulating layer. The first bonding pad may include a first pad metal layer and a first conductive barrier layer surrounding the first pad metal layer, and the first conductive barrier layer may include a horizontal extension portion extending on an edge of an upper surface of the first pad metal layer.


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