The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 06, 2026

Filed:

Mar. 21, 2024
Applicant:

Nanya Technology Corporation, New Taipei City, TW;

Inventor:

Yuan-Yuan Lin, New Taipei City, TW;

Assignee:

NANYA TECHNOLOGY CORPORATION, New Taipei City, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10W 20/47 (2026.01); H10P 14/60 (2026.01); H10W 20/41 (2026.01);
U.S. Cl.
CPC ...
H10W 20/47 (2026.01); H10P 14/6319 (2026.01); H10W 20/425 (2026.01); H10W 20/435 (2026.01);
Abstract

The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a first interconnect structure disposed in a semiconductor substrate, first and second dielectric layers disposed over the semiconductor substrate, a second interconnect structure disposed in the first and second dielectric layers, and a third interconnect structure disposed in the semiconductor substrate. The first interconnect structure includes a first conductive line and a first manganese-containing layer. The second interconnect structure includes a second conductive line and a second manganese-containing layer. The third interconnect structure includes a third conductive line and a third manganese-containing layer. The third manganese-containing layer of the third interconnect structure and the first manganese-containing layer of the first interconnect structure are made of a same material.


Find Patent Forward Citations

Lin, Yuan-Yuan. (2026). Semiconductor device with composite dielectric and method for fabricating the same (U.S. Patent No. 12757725). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12757725

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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