The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 06, 2026

Filed:

Dec. 13, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Jungtae Sung, Suwon-si, KR;

Yunsun Jang, Suwon-si, KR;

Moorym Choi, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 41/35 (2023.01); H10B 41/41 (2023.01); H10B 43/35 (2023.01); H10B 43/40 (2023.01); H10D 30/68 (2025.01); H10D 30/69 (2025.01); H10D 62/13 (2025.01); H10D 62/17 (2025.01); H10W 20/41 (2026.01); H10W 20/42 (2026.01); H10W 20/44 (2026.01); H10W 70/20 (2026.01); H10W 90/00 (2026.01); H10W 90/20 (2026.01); H10W 90/24 (2026.01);
U.S. Cl.
CPC ...
H10W 20/435 (2026.01); H10B 41/35 (2023.02); H10B 41/41 (2023.02); H10B 43/35 (2023.02); H10B 43/40 (2023.02); H10D 30/6892 (2025.01); H10D 30/696 (2025.01); H10D 62/151 (2025.01); H10D 62/235 (2025.01); H10W 20/42 (2026.01); H10W 20/4403 (2026.01); H10W 70/20 (2026.01); H10W 90/00 (2026.01); H10W 90/20 (2026.01); H10W 90/24 (2026.01); H10W 90/701 (2026.01); H10W 90/752 (2026.01); H10W 90/754 (2026.01); H10W 90/792 (2026.01);
Abstract

A semiconductor device includes a first semiconductor structure including a lower bonding structure, and a second semiconductor structure including a second substrate disposed on the first semiconductor structure, gate electrodes stacked and spaced apart from each other in a first direction perpendicular to a lower surface of the second substrate, an upper bonding structure bonded to the lower bonding structure, a plate conductive layer disposed on an upper surface of the second substrate, electrically connected to a channel layer, and including a metal material, and an isolation structure penetrating an entirety of the gate electrodes and extending in a second direction perpendicular to the first direction. The isolation structure includes a vertical conductive layer that extends from and is integrated with the plate conductive layer, and that includes a same metal material as the metal material of the plate conductive layer.


Find Patent Forward Citations

Sung, Jungtae. (2026). Semiconductor device and electronic system including the same (U.S. Patent No. 12757720). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12757720

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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