Semiconductor device having a through contact connected to a buried pattern and penetrating a field insulation film and an etch stop layer

Abstract

A semiconductor device may include: a substrate including a first side and a second side; an active pattern that is on the first side and extends in a first direction; an etch stop layer that extends along the first side and does not extend along side faces of the active pattern; a field insulating film that is on the first side and covers at least a part of the side faces of the active pattern; a gate structure that extends in a second direction on the active pattern and the field insulating film; a through contact that extends in a third direction and penetrates the field insulating film and the etch stop layer; a buried pattern connected to the through contact, inside the substrate; and a backside wiring structure that is on the second side and electrically connected to the buried pattern.