The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2026
Filed:
Jul. 01, 2022
Robert Bosch Gmbh, Stuttgart, DE;
Humberto Rodriguez Alvarez, Kornwestheim, DE;
Jan-Hendrik Alsmeier, Pfullingen, DE;
Robert Bosch GmbH, Stuttgart, DE;
Abstract
A method for manufacturing a silicon carbide semiconductor component including a monocrystalline silicon carbide substrate and a polycrystalline silicon carbide substrate. The method includes: depositing a silicon layer onto the polycrystalline silicon carbide substrate; depositing a germanium layer onto the monocrystalline silicon carbide substrate; connecting the silicon layer and the germanium layer by a first laser, laser beams being coupled in through the polycrystalline silicon carbide substrate, and a connection layer consisting of silicon and germanium being produced; creating active regions on or within the monocrystalline silicon carbide substrate; depositing a glass substrate onto the active regions, the glass substrate being connected to the active regions by means of an adhesion layer; and removing the connection layer using a third laser, laser beams being coupled in through the polycrystalline silicon carbide substrate.