The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 06, 2026

Filed:

Jun. 23, 2022
Applicant:

Tcl Technology Group Corporation, Huizhou, CN;

Inventors:

Zhiwen Nie, Huizhou, CN;

Wenyong Liu, Huizhou, CN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10K 85/60 (2023.01); B01J 2/30 (2006.01); C09C 1/04 (2006.01); C09C 3/08 (2006.01); H10K 50/115 (2023.01); H10K 50/16 (2023.01); H10K 102/10 (2023.01);
U.S. Cl.
CPC ...
H10K 85/60 (2023.02); C09C 1/043 (2013.01); C09C 3/08 (2013.01); C01P 2004/64 (2013.01); C01P 2006/40 (2013.01); H10K 50/115 (2023.02); H10K 50/16 (2023.02); H10K 2102/101 (2023.02);
Abstract

The present application discloses a method for modifying zinc oxide nanoparticles, comprising following steps: obtaining zinc oxide solution and betaine ligands; mixing the zinc oxide solution and the betaine ligand, keeping a resulting mixed solution reacted under a protective gas atmosphere at a preset temperature, and separating a modified zinc oxide from the resulting mixed solution to obtain a modified zinc oxide. The method for modifying zinc oxide nanoparticles provided in the present application is simple and quick to operate, suitable for industrial production and meets application requirements. And the modified zinc oxide with betaine ligands grafted on the surface has good stability and excellent monodisperse performance, hinders the transmission rate of electrons to a certain extent and improves the recombination efficiency of electrons and holes in the quantum dot light-emitting layer.


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