The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2026
Filed:
Sep. 22, 2023
Samsung Electronics Co., Ltd., Suwon-si, KR;
Jiho You, Suwon-si, KR;
Sanghyun Kim, Suwon-si, KR;
Juwon Jeong, Suwon-si, KR;
Sungwoo Choi, Suwon-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A light-emitting device includes: a semiconductor light-emitting structure configured to emit light having a first wavelength; a wavelength conversion layer configured to convert the light which has the first wavelength into light having a second wavelength that is greater than the first wavelength; and a multi-inorganic-film coating layer spaced apart from a light-emitting surface with the wavelength conversion layer therebetween. The multi-inorganic-film coating layer includes a distributed Bragg reflector structure in which first and second inorganic films are alternately stacked, and an uppermost inorganic film farthest from the wavelength conversion layer from among the plurality of inorganic films has a greatest thickness in a first direction perpendicular to the light-emitting surface of the semiconductor light-emitting structure. The first refractive index is selected from a range of about 1.1 to about 1.5, and the second refractive index is selected from a range of about 2.0 to about 3.0.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile