The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2026
Filed:
Dec. 07, 2023
Tianjin Sanan Optoelectronics Co., Ltd., Tianjin, CN;
Zhiwei Wu, Tianjin, CN;
Yanyun Wang, Tianjin, CN;
Weiping Xiong, Tianjin, CN;
Di Gao, Tianjin, CN;
Huanshao Kuo, Tianjin, CN;
Yuren Peng, Tianjin, CN;
Tianjin Sanan Optoelectronics Co., Ltd., Tianjin, CN;
Abstract
A light emitting diode and a light emitting device are provided. The light emitting diode includes: a semiconductor epitaxial stacked layer at least including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer and formed with a first mesa; a first contact electrode located on the first mesa and electrically connected to the first conductive type semiconductor layer; a second contact electrode located on the second conductive type semiconductor layer and electrically connected to the second conductive type semiconductor layer; and a first wiring electrode and a second wiring electrode located on the first contact electrode and the second contact electrode. Horizontal projections of the first wiring electrode and the second wiring electrode on the semiconductor epitaxial stacked layer fall within horizontal projections of the first contact electrode and the second contact electrode.