The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 06, 2026

Filed:

Mar. 26, 2024
Applicant:

Japan Display Inc., Tokyo, JP;

Inventors:

Hayata Aoki, Tokyo, JP;

Masumi Nishimura, Tokyo, JP;

Hiroumi Kinjo, Tokyo, JP;

Assignee:

Japan Display Inc., Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10H 20/825 (2025.01); H10H 20/814 (2025.01); H10H 20/817 (2025.01); H10W 90/00 (2026.01);
U.S. Cl.
CPC ...
H10H 20/825 (2025.01); H10H 20/814 (2025.01); H10H 20/817 (2025.01); H10W 90/00 (2026.01);
Abstract

A light emitting device includes a plurality of pixels arranged in a matrix in a first direction and in a second direction orthogonal to the first direction. Each of the plurality of pixels includes an amorphous substrate, a semi-transparent reflective layer over the amorphous substrate, a first insulating alignment layer over the semi-transparent reflective layer, a first semiconductor layer over the first insulating alignment layer, a light emitting layer over the first semiconductor layer, a second semiconductor layer over the light emitting layer, and an electrode layer over the second semiconductor layer. Each of the first semiconductor layer, the light emitting layer, and the second semiconductor layer includes gallium nitride.


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