The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2026
Filed:
May. 15, 2023
Applicants:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Toshiba Energy Systems & Solutions Corporation, Kawasaki, JP;
Inventors:
Takeshi Gotanda, Yokohama Kanagawa, JP;
Tomohiro Tobari, Yokohama Kanagawa, JP;
Yutaka Saita, Yokohama Kanagawa, JP;
Assignee:
KABUSHIKI KAISHA TOSHIBA, Kawasaki, JP;
Primary Examiner:
Int. Cl.
CPC ...
H10F 10/142 (2025.01); H10F 71/00 (2025.01); H10F 77/20 (2025.01); H10K 30/80 (2023.01); H10K 39/15 (2026.01); H10K 39/18 (2026.01); H10K 85/50 (2023.01);
U.S. Cl.
CPC ...
H10F 10/142 (2025.01); H10F 71/129 (2025.01); H10F 77/219 (2025.01); H10F 77/247 (2025.01); H10K 30/80 (2023.02); H10K 39/15 (2023.02); H10K 39/18 (2023.02); H10K 85/50 (2023.02);
Abstract
The present embodiment provides a semiconductor element that can generate power with high efficiency and has high durability. A multilayer junction photoelectric conversion element according to an embodiment comrises: