The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2026
Filed:
Jul. 10, 2023
Applicant:
Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;
Inventors:
Atsushi Umezaki, Isehara, JP;
Hajime Kimura, Atsugi, JP;
Assignee:
Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 19/00 (2006.01); G09G 3/20 (2006.01); G09G 3/36 (2006.01); G11C 19/28 (2006.01); H10D 30/67 (2025.01); H10D 86/40 (2025.01); H10D 86/60 (2025.01);
U.S. Cl.
CPC ...
H10D 86/60 (2025.01); G09G 3/20 (2013.01); G09G 3/3674 (2013.01); G09G 3/3677 (2013.01); G11C 19/28 (2013.01); G11C 19/287 (2013.01); H10D 30/6755 (2025.01); H10D 86/423 (2025.01); H10D 86/441 (2025.01); G09G 2310/0286 (2013.01);
Abstract
An object is to provide a semiconductor device with improved operation. The semiconductor device includes a first transistor, and a second transistor electrically connected to a gate of the first transistor. A first terminal of the first transistor is electrically connected to a first line. A second terminal of the first transistor is electrically connected to a second line. The gate of the first transistor is electrically connected to a first terminal or a second terminal of the second transistor.