The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2026
Filed:
Sep. 21, 2023
Renesas Electronics Corporation, Tokyo, JP;
Hiroyoshi Kudou, Tokyo, JP;
Hideki Niwayama, Tokyo, JP;
RENESAS ELECTRONICS CORPORATION, Tokyo, JP;
Abstract
Reliability of a semiconductor device is improved, and a decrease in yield is suppressed. A hard mask is formed on an upper surface of a semiconductor substrate. A trench is formed in the semiconductor substrate exposed out from the hard mask. A gate insulating film is formed in the trench. A conductive film is formed on the gate insulating film and the hard mask. The conductive film on the hard mask is removed, and a gate electrode is formed in the trench. A cap film is formed on an upper surface of the gate electrode. The hard mask is removed. A gate insulating film is formed on the upper surface of the semiconductor substrate. A conductive film is formed on the gate insulating film and the cap film. The conductive film on the cap film is removed, and a gate electrode is formed on the gate insulating film.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile