The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2026
Filed:
Oct. 05, 2023
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Jeeeun Yang, Suwon-si, KR;
Sangwook Kim, Suwon-si, KR;
Euntae Kim, Suwon-si, KR;
Kwanghee Lee, Suwon-si, KR;
Moonil Jung, Suwon-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 64/62 (2025.01); H10D 30/67 (2025.01); H10D 64/01 (2025.01); H10D 99/00 (2025.01); H10P 14/20 (2026.01); H10P 14/24 (2026.01);
U.S. Cl.
CPC ...
H10D 64/62 (2025.01); H10D 30/6728 (2025.01); H10D 30/6755 (2025.01); H10D 30/6757 (2025.01); H10D 64/011 (2026.01); H10D 99/00 (2025.01); H10P 14/24 (2026.01); H10P 14/3434 (2026.01);
Abstract
Provided are a semiconductor device and a method of manufacturing the same. The semiconductor device includes a lower electrode on a substrate, a metal oxide on the lower electrode, a buffer on the metal oxide, an oxide channel in the buffer, a gate insulating layer in the oxide channel, a gate electrode in the gate insulating layer, and an upper electrode on the gate electrode, and the buffer may include a silicide material.