The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 06, 2026

Filed:

May. 22, 2024
Applicant:

Panasonic Holdings Corporation, Osaka, JP;

Inventors:

Daisuke Shibata, Kyoto, JP;

Satoshi Tamura, Osaka, JP;

Naoki Torii, Osaka, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 62/85 (2025.01); H10D 30/47 (2025.01); H10D 62/10 (2025.01); H10D 62/854 (2025.01); H10D 64/23 (2025.01); H10W 44/00 (2026.01);
U.S. Cl.
CPC ...
H10D 62/8503 (2025.01); H10D 30/475 (2025.01); H10D 62/102 (2025.01); H10D 62/854 (2025.01); H10D 64/258 (2025.01); H10W 44/401 (2026.01);
Abstract

A nitride semiconductor device includes a substrate, a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, a third semiconductor layer that has a resistance higher than that of the second semiconductor layer, and a fourth semiconductor layer of the second conductivity type that are arranged sequentially from a lower side; a fifth semiconductor layer including a channel region of the first conductivity type, a portion of the fifth semiconductor layer being disposed along the inner surface of a first opening and the other portion of the fifth semiconductor layer being disposed above the fourth semiconductor layer, the first opening penetrating through the fourth semiconductor layer, the third semiconductor layer, and the second semiconductor layer; a sixth semiconductor layer of the second conductivity type disposed above the fifth semiconductor layer; a gate electrode; a source electrode; and a drain electrode.


Find Patent Forward Citations

Shibata, Daisuke. (2026). Nitride semiconductor device (U.S. Patent No. 12757465). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12757465

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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