Semiconductor device having source/drain pattern including multiple layers with different conductivity type

Abstract

A semiconductor device includes: an active pattern which includes a first lower pattern and first sheet patterns, wherein the first lower pattern extends in a first direction, and the plurality of first sheet patterns are spaced apart from the first lower pattern in a second direction crossing the first direction; a gate structure, which includes a gate electrode and a gate spacer extending in a third direction intersecting the first and second directions, disposed on the active pattern; a first source/drain pattern adjacent to a side of the gate structure; and a second source/drain pattern which is spaced apart from the first source/drain pattern with the gate structure interposed therebetween, wherein the first source/drain pattern includes: a lower layer including a first conductivity type and disposed on the first lower pattern, and an upper layer including a second conductivity type, wherein the second source/drain pattern has the second conductivity type.