The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2026
Filed:
Oct. 26, 2023
Samsung Electronics Co., Ltd., Suwon-si, KR;
Sanghyun Jo, Suwon-si, KR;
Jinseong Heo, Suwon-si, KR;
Kihong Kim, Suwon-si, KR;
Hyunjae Lee, Suwon-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A field effect transistor includes a source region, a drain region, a channel between the source region and the drain region, a gate insulating layer configured to cover an upper surface of the channel, and a gate electrode configured to cover an upper surface of the gate insulating layer. The gate insulating layer includes a first region where a ferroelectric crystal structure is dominant and a second region where a non-ferroelectric structure is dominant. The gate electrode includes a first pattern region facing the first region of the gate insulating layer and a second pattern region facing the second region of the gate insulating layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile