The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2026
Filed:
Jun. 10, 2024
Microchip Technology Incorporated, Chandler, AZ (US);
Shesh Mani Pandey, Gilbert, AZ (US);
Randy L. Yach, Phoenix, AZ (US);
Bruce Odekirk, Portland, OR (US);
Microchip Technology Incorporated, Chandler, AZ (US);
Abstract
A trench power semiconductor device comprising a silicon carbide drain layer, a silicon carbide drift layer over the silicon carbide drain layer and a first silicon layer over the silicon carbide drift layer. A second silicon layer over the first silicon layer with a source silicon carbide layer over the second silicon layer. A trench formed through the source silicon carbide layer, through the second silicon layer and into at least partially the first silicon layer. A gate terminal contact formed on the trench with a drain terminal contact formed on the silicon carbide drain layer.