The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2026
Filed:
Oct. 25, 2021
Rohm Co., Ltd., Kyoto, JP;
Yasushi Hamazawa, Kyoto, JP;
ROHM CO., LTD., Kyoto, JP;
Abstract
A semiconductor device includes a chip, a drain region, a source region formed at the surface layer portion of the main surface at a distance from the drain region, a channel inversion region formed on a side of the source region between the drain region and the source region in the surface layer portion of the main surface, a drift region formed in a region between the drain region and the channel inversion region in the surface layer portion of the main surface, a gate insulating film having a first portion that covers the channel inversion region on the main surface and a second portion that covers the drift region on the main surface, and a gate electrode having a first electrode portion covering the first portion and a second electrode portion led out from the first electrode portion onto second portion so as to partially expose second portion.