The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2026
Filed:
Dec. 01, 2023
Applicant:
Littelfuse Semiconductor (Wuxi) Co., Ltd., Wuxi, CN;
Inventors:
Assignee:
Littelfuse Semiconductor (Wuxi) Co., Ltd., Wuxi, CN;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 18/80 (2025.01); H10D 18/01 (2025.01);
U.S. Cl.
CPC ...
H10D 18/80 (2025.01); H10D 18/021 (2025.01);
Abstract
A TRIAC semiconductor includes an N− region, multiple N+ regions, and a trench. The N− region is sandwiched between two P regions. The first P region is connected to an MT2 terminal and the second P region is connected to two MT1 terminals. The multiple N+ regions are located within the first P region. The trench is located between two gate terminals.
Quick Actions:
Zhou, Jifeng. (2026). High noise immunity triac structure (U.S. Patent No. 12757421). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12757421
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